Revolutionizing Power: AGNIT Semiconductors' GaN Innovation

AGNIT Semiconductors, incubated at the Indian Institute of Science, has secured a USD 2.6 million seed extension. The funding aims to scale gallium nitride technology, seen as a silicon successor in power applications, enhancing efficiency in electric vehicles and renewable energy systems.

AGNIT Semiconductors, a pioneering startup incubated at the Indian Institute of Science, has successfully raised a USD 2.6 million seed extension. This financial boost aims to expand their work with gallium nitride (GaN), a technology poised to replace silicon in high power and frequency applications.

CEO Hareesh Chandrasekar emphasized GaN's potential impact, particularly in electric vehicles and renewable energy solutions. GaN's efficiency, marked by up to 97% in device performance, surpasses traditional silicon by four to five percent, promising significant energy savings and reduced CO2 emissions.

Established in 2006, IISc's work with GaN highlights a transformative shift in India's semiconductor industry, underlining the country's ascent in the global IP value chain. GaN's capabilities offer advancements in semiconductor manufacturing and energy applications, making it crucial for next-gen technology advances.

(With inputs from agencies.)