Samsung develops HBM3E 12H DRAM with industry-leading capacity of 36GB

Samsung Electronics has developed HBM3E 12H, the industry's first 12-stack HBM3E DRAM with an industry-leading capacity of 36 gigabytes (GB), the South Korean tech giant announced on Tuesday.

Compared to the 8-stack HBM3 8H, Samsung&r's HBM3E 12H provides more than 50% improvement in terms of capacity and performance. It is expected to be an ideal solution for future systems that require more memory. Customers will be able to manage their resources more flexibly and reduce the total cost of ownership (TCO) for data centers.

HBM3E 12H can increase the average speed for AI training by 34% while the number of simultaneous users of inference services can be expanded more than 11.5 times compared to HBM3 8H.

The advanced thermal compression non-conductive film (TC NCF) allows the 12-layer products to have the same height specification as 8-layer ones to meet current HBM package requirements. The reduced thickness of the NCF material results in enhanced vertical density by over 20% compared to its HBM3 8H product.

Further, Samsung's advanced TC NCF also enhances the thermal properties of the HBM by enabling the use of bumps in various sizes between the chips, resulting in higher product yield.

Samsung's HBM3E 12H will undergo mass production in the first half of this year.

"The industry's AI service providers are increasingly requiring HBM with higher capacity, and our new HBM3E 12H product has been designed to answer that need. This new memory solution forms part of our drive toward developing core technologies for high-stack HBM and providing technological leadership for the high-capacity HBM market in the AI era," said Yongcheol Bae, Executive Vice President of Memory Product Planning at Samsung Electronics.