Samsung unveils 12nm-class 32Gb DDR5 DRAM - industry’s first and highest-capacity

Samsung Electronics has announced the development of the industry's first and highest-capacity 32Gb DDR5 DRAM using 12 nm-class process technology.

The new product solidifies Samsung's leadership in next-generation DRAM technology, paving the way to DRAM modules of up to 1TB capacity.

The 12nm-class 32Gb DDR5 DRAM boasts the industry's highest capacity for a single DRAM chip and offers double the capacity of 16Gb DDR5 DRAM in the same package size, enabling 128GB DRAM module production without the TSV process and decreasing power consumption by nearly 10%.

"With our 12nm-class 32Gb DRAM, we have secured a solution that will enable DRAM modules of up to 1-terabyte (TB), allowing us to be ideally positioned to serve the growing need for high-capacity DRAM in the era of AI (Artificial Intelligence) and big data. We will continue to develop DRAM solutions through differentiated process and design technologies to break the boundaries of memory technology," said SangJoon Hwang, Executive Vice President of DRAM Product & Technology at Samsung Electronics.

Samsung will begin mass-producing the new 12nm-class 32Gb DDR5 DRAM by the end of this year. The company will supply the 12-nm-class 32Gb DRAM to data centers as well as to customers that require applications like AI and next-generation computing

The South Korean chip maker will continue to expand its lineup of high-capacity DRAM to meet the current and future demands of the computing and IT industry.