Infineon Revolutionizes Semiconductor Industry with Groundbreaking 300 mm GaN Technology

Infineon Technologies has unveiled the world's first 300 mm power gallium nitride (GaN) wafer technology, marking a significant advancement in semiconductor manufacturing. This breakthrough technology offers increased efficiency and substantial cost benefits. The company plans to showcase the new GaN wafers at the electronica trade show in November 2024.

Infineon Technologies AG has announced a major breakthrough in semiconductor manufacturing with the development of the world's first 300 mm power gallium nitride (GaN) wafer technology. This pioneering accomplishment positions Infineon as a leader in the GaN market, leveraging its advanced 300 mm silicon manufacturing capabilities to maximize efficiency and cost-effectiveness.

GaN-based power semiconductors are increasingly used in various applications, including industrial, automotive, and consumer electronics, due to their superior performance, smaller size, and lower costs. With the new 300 mm GaN technology, Infineon aims to meet the growing market demand while ensuring supply stability.

Jochen Hanebeck, CEO of Infineon Technologies, emphasized that this innovation demonstrates the company's commitment to leading in GaN and power systems. The first 300 mm GaN wafers will be presented to the public at the electronica trade show in Munich in November 2024.

(With inputs from agencies.)